DS1230Y Integrated Circuits
| Voltage | 3.4 V |
| Temperature | 70 Degree C |
| Model No | DS1230Y |
| Current | 2.0 A |
| Color | Black and Silver |
| Shape | Rectangle |
| Material | Plastic and SS |
| Mounting Type | SMD |
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Description
DS1230Y Integrated Circuits
The DS1230 256k Nonvolatile SRAMs consist of 262,144 bits, fully static and nonvolatile, organized into 32,768 words of 8 bits each.
Each NV SRAM is equipped with a self-contained lithium energy source and control circuitry that continuously monitors VCC for any out-of-tolerance conditions. In the event of such a condition, the lithium energy source is automatically activated, and write protection is unconditionally enforced to avert data corruption.
DIP-package DS1230 devices can directly replace existing 32k x 8 static RAMs, conforming to the widely used bytewide 28-pin DIP standard. Additionally, these DIP devices are compatible with the pinout of 28256 EEPROMs, facilitating direct substitution while improving performance.
DS1230 devices housed in the Low Profile Module package are specifically tailored for surface-mount applications. There are no restrictions on the number of write cycles that can be performed, and no extra support circuitry is necessary for interfacing with microprocessors.
