DS1225Y Integrated Circuits

DS1225Y Integrated Circuits

The DS1225Y 64k Nonvolatile SRAM is a 65,536-bit, fully static, nonvolatile RAM structured as 8192 words by 8 bits.

Each NV SRAM features a self-contained lithium energy source along with control circuitry that continuously monitors VCC for any out-of-tolerance conditions. In the event of such a condition, the lithium energy source is automatically activated, and write protection is unconditionally enabled to avert data corruption.

The NV SRAM can directly replace existing 8k x 8 SRAMs that conform to the widely used bytewide 28-pin DIP standard. Additionally, the DS1225Y is compatible with the pinout of the 2764 EPROM or the 2864 EEPROM, facilitating direct substitution while improving performance.

There are no restrictions on the number of write cycles that can be performed, and no extra support circuitry is necessary for interfacing with microprocessors.