DS1220Y Integrated Circuits
| Memory Organization | 2K-8 |
| Operating Temperature | 70 Degree C |
| Shape | Rectangle |
| Color | Black |
| Model No | DS1220Y |
| Access Time | 200 ns |
| Mounting Type | Through hole |
| Write Cycle Time | 200 ns |
| Voltage | 4.5-5.5 V |
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Description
DS1220Y Integrated Circuits
The DS1220Y 16k Nonvolatile SRAM is a fully static, nonvolatile RAM with a capacity of 16,384 bits, organized into 2048 words of 8 bits each.
Each NV SRAM features a self-contained lithium energy source along with control circuitry that continuously monitors VCC for any out-of-tolerance conditions. In the event of such a condition, the lithium energy source is automatically activated, and write protection is unconditionally enabled to safeguard against data corruption.
This NV SRAM can directly replace existing 2k x 8 SRAMs that conform to the widely used bytewide 24-pin DIP standard. Additionally, the DS1220Y is compatible with the pinout of the 2716 EPROM or the 2816 EEPROM, facilitating direct substitution while improving performance.
There are no restrictions on the number of write cycles that can be performed, and no extra support circuitry is necessary for interfacing with microprocessors.
